Global Foundries

Memories Currently Available (qualified, silicon proven or in design phase).

GLOBAL FOUNDRIES 22 FDX and 22 FDX+ — Nordic Semi is IP Partner with Global Foundries!!!!!
Part NumberTechnologyDescriptionBit CellPower Supply (V)
SP-ULL-GF22FDXGF22FDXSingle port SRAM compiler with optional redundancy, low power retention mode, and three speed optionsP110UL0.8
SP-ULL-GF22FDX PLUSGF22FDX+Single port SRAM compiler with optional redundancy, low power retention mode, and three speed optionsP110UL0.8
RF1P-ULL-GF22FDXGF22FDXSingle port register file compiler with low power retention mode and three speed optionsP110UL0.8
RF1P-ULL-GF22FDX PLUSGF22FDX+Single port register file compiler with low power retention mode and three speed optionsP110UL0.8
SP-ULD-GF22FDX-PLUSGF22FDX+SP Ultra Low Leakage SRAM. Only SRAM on market which utilizes L110 Bit Cell together with high Vt Periphery to provide lowest leakage together with highest yield.L1100.65/0.8
RF1P-ULD-GF22FDX-PLUSGF22FDX+SP Ultra Low Leakage Reg File. Only Register File on market which utilizes L110 Bit Cell together with high Vt Periphery to provide lowest leakage together with highest yield.L1100.65/0.8
SP-HSB-GF22FDX-PLUSGF22FDX+High Speed Multi Bank 32KWords Deep. Utilizes L110 Bit Cell together with high Vt Periphery to provide lowest leakage together with highest yield.L1100.65/0.8
RF2P-ULL-GF22FDX-PLUSGF22FDX+2 Port Register FileTP185SL0.8
SP-ULX-GF22FDX-PLUSGF22FDX+Single Port SRAM w/dedicated Standby mode, optional array source biasing & separate array/periphery power supplies for ultra low leakageL1100.5V to 0.8V
RF2P-UXL-GF22FDX-PLUSGF22FDX+2 Port Register File w/dedicated Standby mode and “precharge” bit line to enable ultra Low LeakageTP185SL0.5V to 0.8V